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| SD2942 RF Power Transistors HF/VHF/UHF N - Channel MOSFETs General Features GOLD METALLIZATION EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION, PUSH PULL POUT = 350W MIN. WITH 15dB GAIN @ 175MHz LOW R DS(on) M244 Epoxy sealed Pin Connection Description The SD2942 is a gold metallized N-Channel MOS field-effect RF power transistor. The SD2942 offers 25% lower R ds(ON) than industry standard and 20% higher power saturation than ST SD2932. These characteristics make the SD2942 ideal for 50V DC very high power application up to 250 MHz. 1 1 3 1. Drain 2. Gate 3. Source 2 2 3 Order Codes Part Number SD2942 Marking SD2942 Package M244 Packaging Plastic Tray October 2005 Rev 1 1/14 www.st.com 14 SD2942 Contents 1 Electrical Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.1 1.2 1.3 Maximum Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics (TCASE = 25C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2 3 4 5 6 Impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Typical Performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Mechanical Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/14 SD2942 1 Electrical Data 1 1.1 Table 1. Electrical Data Maximum Rating Absolute Maximum Rating (TCASE = 25C) Symbol V(BR)DSS(1) VDGR(1) VGS ID PDISS TJ TSTG 1. TJ = 150 C Parameter Drain Source Voltage Drain-Gate Voltage (RGS = 1M) Gate-Source Voltage Drain Current Power Dissipation Max. Operating Junction Temperature Storage Temperature Value 130 130 20 40 500 +200 -65 to +150 Unit V V V A W C C 1.2 Table 2. Thermal Data Thermal data Parameter Junction to Case thermal resistance Value 0.35 Unit C/W Symbol RthJC 3/14 1 Electrical Data SD2942 1.3 Table 3. Electrical Characteristics (TCASE = 25C) Static (per section) Test Conditions VGS = 0 V VGS = 0 V VGS = 20 V VDS = 10 V VGS = 10 V VDS = 10 V VGS = 0 V VGS = 0 V VGS = 0 V IDS = 100 mA VDS = 50 V VDS = 0 V ID = 250 mA ID = 10 A ID = 5 A VDS = 50 V VDS = 50 V VDS = 50 V f = 1 MHz f = 1 MHz f = 1 MHz 5 415 236 17 1.5 Min. 130 50 250 4 3.0 Typ. Max. Unit V A nA V V mho pF pF pF Symbol V(BR)DSS(1) IDSS IGSS VGS(Q) VDS(ON) GFS CISS COSS CRSS 1. TJ = 150C Table 4. Symbol POUT G PS D Load Mismatch Dynamic Test Conditions VDD = 50 V VDD = 50 V VDD = 50 V VDD = 50 V IDQ = 500 mA IDQ = 500 mA POUT = 350 W IDQ = 500 mA POUT = 350 W IDQ = 500 mA POUT = 350 W f = 175MHz f = 175MHz f = 175MHz f = 175MHz Min. 350 15 55 5:1 17 61 Typ. Max. Unit W dB % VSWR All Phase Angles 4/14 SD2942 2 Impedance 2 Figure 1. Impedance Impedance Data Schematic D ZDL Typical Input Impedance Typical Drain Load Impedance G ZIN S Table 5. f Impedance Data ZIN () 1.3 - j 1.9 1.2 - j 1.8 1.1 - j 1.6 1.0 - j 1.4 1.8 - j 2.5 3.2 - j 4.4 ZDL () 1.9 + j 3.2 2.1 + j 3.7 2.7 +j 4.2 3.3 + j 4.8 7.5 + j 9 10 + j 12 250 MHz 230 MHz 200 MHz 175 MHz 100 MHz 50 MHz 5/14 3 Typical Performance SD2942 3 Typical Performance Figure 2. 1000 Capacitance Vs Drain Voltage CISS Figure 3. 20 18 16 Drain Current Vs Gate Voltage Vds = 10 V COSS Capacitance (pF) 100 14 12 Id (A) 10 8 6 Freq = 1 MHz CRSS 10 4 2 Tc = +80 C Tc = +25 C Tc = -20 C 0 1 0 5 10 15 20 25 30 35 40 45 50 55 Vdd (V) 0 1 2 3 Vgs (V) 4 5 6 Figure 4. 1.15 Gate Source Voltage Vs Case Temp. Figure 5. 100 Safe Operating Area 1.10 Vgs (V - Normalized) 1.05 Id = 11 A Id = 10 A 1.00 Id = 7 A Id = 9 A Ids (A) Id = 5 A 0.95 10 Id = 4 A Id = 2 A Id = 1 A 0.90 0.85 Id = 0.25 A Id = 0.1 A 0.80 -25 0 25 Tc ( C) o 1 50 75 100 1 10 Vds (V) 100 1000 6/14 SD2942 Figure 6. 20 19 18 17 Gain (dB) 16 15 +80C 14 13 12 0 50 100 150 200 250 Pout (W) 300 350 400 450 500 Vdd = 50V Idq = 2 x 250mA Freq = 175 MHz 10 20 3 Typical Performance Power Gain Vs Pout and Case Temp. Figure 7. 70 Efficiency Vs Pout and Case Temp. +25C 60 -20C -20C 50 +80C +25C Nd (%) 40 30 Vdd = 50V Idq = 2 x 250mA Freq = 175 MHz 0 50 100 150 200 250 300 Pout (W) 350 400 450 500 0 Figure 8. Pout Vs Input Power and Case Temp Figure 9. Pout Vs Input Power & Drain Voltage 500 450 400 350 Pout (W) 300 250 200 150 100 50 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 Pin (W) Vdd = 50V Idq = 2 x 250mA Freq = 175 MHz -20C +25C +80C Pout (W) 500 450 50V 400 350 300 250 200 150 100 50 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 Pin (W) Freq = 175 MHz Idq = 2 x 250mA 40V 7/14 3 Typical Performance SD2942 Figure 10. Pout Vs Gate Voltage & Case Temp. Figure 11. Pout Vs Drain Voltage & Input Power 500 450 400 350 Pout (W) 300 - 20C 500 Pin = 10W 450 400 +25C 350 Pout (W) Pin = 7W 300 250 250 200 150 100 50 0 -4 -3 -2 -1 0 Vgs (V) 1 2 +80C Pin = 5W 200 Freq = 175 MHz Idq = 2 x 250mA Pin = 7W 3 4 150 100 24 28 32 36 Vdd (V) 40 Freq = 175 MHz Idq = 2 x 250mA 44 48 52 Figure 12. Max. Therm. Resist Vs Case Temp. 0.42 0.40 Rth(j-c) ( C/W) o 0.38 0.36 0.34 25 30 35 40 45 50 55 Tc ( C) o 60 65 70 75 80 85 8/14 SD2942 4 Test Circuit 4 Test Circuit Figure 13. 175 MHz Test Circuit Schematic Note: 1 Dimension at component symbol are reference for component placement. 2 Gap between ground and transmission lines is + 0.002{0.05} - 0.000{0.00} Typ. 9/14 4 Test Circuit SD2942 175 MHz Test Circuit Component Part List Symbol Description 470 1 W, Surface Mount Chip Resistor 360 0.5 W, Carbon Comp. Axial Lead Resistor or Equivalent 560 2 W, Resistor Two Turn Wire Air-Wound Axial Lead Resistor 20 K 3.09 W, 10 Turn Wirewound Precision Potentiometer 680 pF ATC 130B Surface Mount Ceramic Chip Capacitor 10000 pF ATC 200B Surface Mount Ceramic Chip Capacitor 75 pF ATC 100B Surface Mount Ceramic Chip Capacitor ST40 25 pF - 115 pF Miniature variable Trimmer 47 pF ATC 100B Surface Mount Ceramic Chip Capacitor 43 pF ATC 100B Surface Mount Ceramic Chip Capacitor 1200 pF ATC 700B Surface Mount Ceramic Chip Capacitor 470 pF ATC 700B Surface Mount Ceramic Chip Capacitor 0.1 F / 500 V Surface Mount Ceramic Chip Capacitor 0.01 F / 500 V Surface Mount Ceramic Chip Capacitor 10 F / 63 Aluminum Electrolytic Axial Lead Capacitor 50 RG316 O.D 0.076[1.93] L = 11.80[299.72] Flexible Coaxial Cable 4 Turns thru Fair-rite Bead 50 RG-142B O.D 0.165[4.19] L = 11.80[299.72] Flexible Coaxial Cable R.F. Transformer 4:1, 25 O.D RG316-25 O.D 0.080[2.03] L = 5.90[149.86] Flexible Coaxial Cable 2 Turns thru Fair-rite Multi-Aperture Core R.F. Transformer 1:4, 25 Semi-rigid Coaxial Cable O.D. 0.141[3.58] L = 5.90[149.86] Inductor 1/4 Wave 50 O.D 0.165[4.19] L = 11.80 [299.72] Flexible Coaxial Cable 2 Turns thru Fair-rite Bead Shield Bead Multi-aperture Core Multilayer Ferrite Chip Bead (Surface Mount) Surface Mount Emi Shield Bead Woven Glass Reinforced PTFE Microwave Laminate 0.06", 1 oz EDCu, Both sides, r = 2.55 Table 6. R1,R2,R5,R6 R3,R4 R7,R8 R9,R10 C1,C4 C2,C3,C7,C8,C17,C19,C20,C21 C5 C6 C9,C10 C11,C12, C13 C14,C15,C24,C25 C16,C18 C22,C23 C26,C27 C28 B1 B2 T1 T2 L1 FB1,FB5 FB2,FB6 FB3 FB4 PCB 10/14 SD2942 Figure 14. 175 MHz Test Circuit Photomaster 4 Test Circuit 8.50 inches Figure 15. 175 MHz Test Circuit 4 inches 11/14 5 Mechanical Data SD2942 5 Table 7. DIM. Mechanical Data M244 (.400 x .860 4/L BAL N/HERM W/FLG) mm. MIN. A B C D E F G H I J K L M N 33.91 0.10 1.52 2.59 4.83 10.03 21.59 3.02 9.65 19.81 10.92 27.94 34.16 0.15 1.78 2.84 5.84 10.34 22.10 1.335 0.004 0.060 0.102 0.190 0.395 0.850 5.59 5.08 3.28 9.91 20.82 11.18 0.119 0.380 0.780 0.430 1.100 1.345 0.006 0.070 0.112 0.230 0.407 0.870 TYP MAX. 5.84 MIN. 0.220 0.200 0.129 0.390 0.820 0.440 inch TYP MAX. 0.230 Figure 16. M244 Package Dimensions Controlling Dimension: Inches 12/14 SD2942 6 Revision History 6 Revision History Date 18 Oct 2005 Revision 1 Description of Changes First Issue. 13/14 6 Revision History SD2942 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners (c) 2005 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 14/14 |
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